ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,204, issued on Sept. 1, was assigned to IOTMEMORY TECHNOLOGY INC. (Taipei City, Taiwan). "Non-volatile memory device" was invented by Der-T... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,205, issued on Sept. 1, was assigned to Intel Corp. (Santa Clara, Calif.). "3D source and drain contacts tuned for PMOS and NMOS" was inven... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,206, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device including two-dimens... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,207, issued on Sept. 1, was assigned to NANJING UNIVERSITY (Nanjing, China). "Structure of two-dimensional material-based device having air... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,208, issued on Sept. 1, was assigned to Institute of Semiconductors, Chinese Academy of Sciences (Beijing). "Method for fabricating semicon... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,209, issued on Sept. 1, was assigned to IDEAL SEMICONDUCTOR DEVICES INC. (Bethlehem, Pa.). "Combined charge balance and edge termination su... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,210, issued on Sept. 1, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Semiconductor device" was invented by Takamasa Ishikawa ... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,211, issued on Sept. 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device structure with backside pic... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,212, issued on Sept. 1, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device with voltage resistant structure" was invented ... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,213, issued on Sept. 1, was assigned to ChangXin Memory Technologies Inc. (Hefei, China). "Manufacturing method of semiconductor structure ... Read More